SEMI OpenIR  > 中科院半导体材料科学重点实验室
Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures
Feng, YX; Liu, GP; Yang, SY; Wei, HY; Liu, XL; Zhu, QS; Wang, ZG
2014
Source PublicationSEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume29Issue:4Pages:045015
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26376
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Feng, YX,Liu, GP,Yang, SY,et al. Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY,2014,29(4):045015.
APA Feng, YX.,Liu, GP.,Yang, SY.,Wei, HY.,Liu, XL.,...&Wang, ZG.(2014).Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures.SEMICONDUCTOR SCIENCE AND TECHNOLOGY,29(4),045015.
MLA Feng, YX,et al."Interface roughness scattering considering the electrical field fluctuation in undoped AlxGa1-xN/GaN heterostructures".SEMICONDUCTOR SCIENCE AND TECHNOLOGY 29.4(2014):045015.
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