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Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties
Liang, JR; Wu, MJ; Hu, M; Liu, J; Zhu, NW; Xia, XX; Chen, HD
2014
Source PublicationCHINESE PHYSICS B
Volume23Issue:7Pages:076801
Subject Area光电子学
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26265
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
Liang, JR,Wu, MJ,Hu, M,et al. Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties[J]. CHINESE PHYSICS B,2014,23(7):076801.
APA Liang, JR.,Wu, MJ.,Hu, M.,Liu, J.,Zhu, NW.,...&Chen, HD.(2014).Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties.CHINESE PHYSICS B,23(7),076801.
MLA Liang, JR,et al."Fabrication of VO2 thin film by rapid thermal annealing in oxygen atmosphere and its metal-insulator phase transition properties".CHINESE PHYSICS B 23.7(2014):076801.
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