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Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells
Zhu, LP; Liu, Y; Jiang, CY; Qin, XD; Li, Y; Gao, HS; Chen, YH
2014
Source PublicationJOURNAL OF APPLIED PHYSICS
Volume115Issue:8Pages:083509
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2015-03-19
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/25962
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zhu, LP,Liu, Y,Jiang, CY,et al. Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells[J]. JOURNAL OF APPLIED PHYSICS,2014,115(8):083509.
APA Zhu, LP.,Liu, Y.,Jiang, CY.,Qin, XD.,Li, Y.,...&Chen, YH.(2014).Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells.JOURNAL OF APPLIED PHYSICS,115(8),083509.
MLA Zhu, LP,et al."Excitation wavelength dependence of the anomalous circular photogalvanic effect in undoped InGaAs/AlGaAs quantum wells".JOURNAL OF APPLIED PHYSICS 115.8(2014):083509.
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