SEMI OpenIR  > 半导体集成技术工程研究中心
沟道型碳化硅肖特基二极管及其制作方法
何志; 张峰; 樊中朝; 赵咏梅; 孙国胜; 季安; 杨富华
Rights Holder中国科学院半导体研究所
Date Available2012-10-10
Country中国
Subtype发明
Subject Area微电子学
Application Date2012-04-16
Application NumberCN201210110576.4
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/25309
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
何志,张峰,樊中朝,等. 沟道型碳化硅肖特基二极管及其制作方法.
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