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Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors
Tan, Ren-Bing; Qin, Hua; Zhang, Xiao-Yu; Xu, Wen
2013
Source PublicationChinese Physics B
Volume22Issue:11Pages:117306
Subject Area光电子学
Indexed ByEI
Language英语
Date Available2014-05-16
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24991
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Tan, Ren-Bing,Qin, Hua,Zhang, Xiao-Yu,et al. Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors[J]. Chinese Physics B,2013,22(11):117306.
APA Tan, Ren-Bing,Qin, Hua,Zhang, Xiao-Yu,&Xu, Wen.(2013).Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors.Chinese Physics B,22(11),117306.
MLA Tan, Ren-Bing,et al."Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors".Chinese Physics B 22.11(2013):117306.
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