SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
掺氮区熔硅单晶深能级的研究
栾洪发; 梁骏吾; 邓礼生; 郑红军; 黄大定
1988
Source Publication半导体学报
Volume9Issue:3Pages:312-314
Subject Area光电子学
Language中文
Date Available2014-05-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24943
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
栾洪发,梁骏吾,邓礼生,等. 掺氮区熔硅单晶深能级的研究[J]. 半导体学报,1988,9(3):312-314.
APA 栾洪发,梁骏吾,邓礼生,郑红军,&黄大定.(1988).掺氮区熔硅单晶深能级的研究.半导体学报,9(3),312-314.
MLA 栾洪发,et al."掺氮区熔硅单晶深能级的研究".半导体学报 9.3(1988):312-314.
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