SEMI OpenIR  > 中科院半导体材料科学重点实验室
High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions
Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua
2013
Source PublicationChinese Physics B
Volume22Issue:9Pages:7302
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-26
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24568
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions[J]. Chinese Physics B,2013,22(9):7302.
APA Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua.(2013).High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions.Chinese Physics B,22(9),7302.
MLA Zheng Liu, Zhang Feng, Liu Sheng-Bei, Dong Lin, Liu Xing-Fang, Fan Zhong-Chao, Liu Bin, Yan Guo-Guo, Wang Lei, Zhao Wan-Shun, Sun Guo-Sheng, He Zhi, Yang Fu-Hua."High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions".Chinese Physics B 22.9(2013):7302.
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