SEMI OpenIR  > 中科院半导体材料科学重点实验室
High performance AlGaNGaN power switch with Si3N4 Insulation
Lin, Defeng; Wang, Xiaoliang; Xiao, Hongling; Kang, He; Wang, Cuimei; Jiang, Lijuan; Feng, Chun; Chen, Hong; Deng, Qingwen; Bi, Yang; Zhang, Jingwen; Hou, Xun
2013
Source PublicationThe European Physical Journal Applied Physics
Volume61Issue:1Pages:10101
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24512
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Lin, Defeng,Wang, Xiaoliang,Xiao, Hongling,et al. High performance AlGaNGaN power switch with Si3N4 Insulation[J]. The European Physical Journal Applied Physics,2013,61(1):10101.
APA Lin, Defeng.,Wang, Xiaoliang.,Xiao, Hongling.,Kang, He.,Wang, Cuimei.,...&Hou, Xun.(2013).High performance AlGaNGaN power switch with Si3N4 Insulation.The European Physical Journal Applied Physics,61(1),10101.
MLA Lin, Defeng,et al."High performance AlGaNGaN power switch with Si3N4 Insulation".The European Physical Journal Applied Physics 61.1(2013):10101.
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