SEMI OpenIR  > 中科院半导体材料科学重点实验室
Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates
Dong, Lin; Sun, Guosheng; Yu, Jun; Zheng, Liu; Liu, Xingfang; Zhang, Feng; Yan, Guoguo; Li, Xiguang; Wang, Zhanguo
2013
Source PublicationApplied Surface Science
Volume270Pages:301-306
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2014-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24495
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Dong, Lin,Sun, Guosheng,Yu, Jun,et al. Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates[J]. Applied Surface Science,2013,270:301-306.
APA Dong, Lin.,Sun, Guosheng.,Yu, Jun.,Zheng, Liu.,Liu, Xingfang.,...&Wang, Zhanguo.(2013).Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates.Applied Surface Science,270,301-306.
MLA Dong, Lin,et al."Growth of f4H-SiC epilayers with low surface roughness and morphological defects density on 4° off-axis substrates".Applied Surface Science 270(2013):301-306.
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