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Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier
Kong, Xin; Wei, Ke; Liu, Guoguo; Liu, Xinyu; Wang, Cuimei; Wang, Xiaoliang
2013
Source PublicationAPPLIED PHYSICS EXPRESS
Volume6Issue:5Pages:051201
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-08-27
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/24274
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Kong, Xin,Wei, Ke,Liu, Guoguo,et al. Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier[J]. APPLIED PHYSICS EXPRESS,2013,6(5):051201.
APA Kong, Xin,Wei, Ke,Liu, Guoguo,Liu, Xinyu,Wang, Cuimei,&Wang, Xiaoliang.(2013).Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier.APPLIED PHYSICS EXPRESS,6(5),051201.
MLA Kong, Xin,et al."Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier".APPLIED PHYSICS EXPRESS 6.5(2013):051201.
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