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Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor
Xu XN (Xu Xiao-Na); Wang XD (Wang Xiao-Dong); Li YQ (Li Yue-Qiang); Chen YL (Chen Yan-Ling); Ji A (Ji An); Zeng YP (Zeng Yi-Ping); Yang FH (Yang Fu-Hua)
2012
Source PublicationCHINESE PHYSICS LETTERS
Volume29Issue:8Pages:087303
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-04-18
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23881
Collection半导体集成技术工程研究中心
Recommended Citation
GB/T 7714
Xu XN ,Wang XD ,Li YQ ,et al. Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor[J]. CHINESE PHYSICS LETTERS,2012,29(8):087303.
APA Xu XN .,Wang XD .,Li YQ .,Chen YL .,Ji A .,...&Yang FH .(2012).Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor.CHINESE PHYSICS LETTERS,29(8),087303.
MLA Xu XN ,et al."Double-Peak N-Shaped Negative Differential Resistance in a Quantum Dot Field Effect Transistor".CHINESE PHYSICS LETTERS 29.8(2012):087303.
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