SEMI OpenIR  > 中科院半导体材料科学重点实验室
Effect of rapid thermal annealing on the luminescence of self-assembled In As quantum dots embedded in GaAs-based photonic crystal nanocavities
Peng, YS; Xu, B; Ye, XL; Jin, P; Wang, ZG
2012
Source PublicationMICROELECTRONIC ENGINEERING
Volume93Pages:1-4
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2013-03-17
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23665
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
Peng, YS,Xu, B,Ye, XL,et al. Effect of rapid thermal annealing on the luminescence of self-assembled In As quantum dots embedded in GaAs-based photonic crystal nanocavities[J]. MICROELECTRONIC ENGINEERING,2012,93:1-4.
APA Peng, YS,Xu, B,Ye, XL,Jin, P,&Wang, ZG.(2012).Effect of rapid thermal annealing on the luminescence of self-assembled In As quantum dots embedded in GaAs-based photonic crystal nanocavities.MICROELECTRONIC ENGINEERING,93,1-4.
MLA Peng, YS,et al."Effect of rapid thermal annealing on the luminescence of self-assembled In As quantum dots embedded in GaAs-based photonic crystal nanocavities".MICROELECTRONIC ENGINEERING 93(2012):1-4.
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