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GaAs基半导体激光器热特性
乔彦彬; 冯士维; 马骁宇; 王晓薇; 郭春生; 邓海涛; 张光沉
2011
Source Publication红外与激光工程
Volume40Issue:11Pages:2134-2137
Abstract对GaAs基808nm半导体激光器进行恒流老化试验,并利用电学法观察退化过程中激光器有源区温度变化和热阻,发现有源区温度随老化时间明显上升,而热阻没有明显变化,同时测试了老化过程中激光器的电学和光学特性,经分析,激光器失效的主要原因是有源区载流子非辐射复合增加,引起激光器有源区温度上升,从而说明电学法热特性测试是检测激光器退化的有效方法之一,为进一步提高激光器的热管理技术和改善其热特性奠定了一定的基础。
metadata_83光电子器件国家工程中心
Subject Area半导体器件
Funding Organization国家863计划,北京市自然科学基金,教育部博士点基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:4402157
Date Available2012-07-17
Citation statistics
Cited Times:4[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23267
Collection光电子器件国家工程中心
Recommended Citation
GB/T 7714
乔彦彬,冯士维,马骁宇,等. GaAs基半导体激光器热特性[J]. 红外与激光工程,2011,40(11):2134-2137.
APA 乔彦彬.,冯士维.,马骁宇.,王晓薇.,郭春生.,...&张光沉.(2011).GaAs基半导体激光器热特性.红外与激光工程,40(11),2134-2137.
MLA 乔彦彬,et al."GaAs基半导体激光器热特性".红外与激光工程 40.11(2011):2134-2137.
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