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Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector
Yan, Tingjing; Chong, Ming; Zhao, Degang; Zhang, Shuang; Chen, Lianghui; Yan, T.(tingjing.yan@gmail.com)
2011
Source PublicationHongwai yu Jiguang Gongcheng/Infrared and Laser Engineering
ISSN10072276
Volume40Issue:1Pages:32-35
AbstractA short wavelength back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector was designed and fabricated. It was photosensitive in the waveband225-255 nm, and the peak wavelength was246 nm. A back-illuminated p-i-n heterojunction structure was grown on transparent sapphire substrate using MOCVD, the AlxGa1-xN alloy composition of the n-type window layer was71%, and the alloy composition of the unintentionally doped(UID) absorber layer was52%. The dark current measured at zero bias was27 pA, and the photocurrent was2.7 nA, while the peak responsivity was23 mA/W. A128×128 pixels solar blind ultraviolet photodetector array was fabricated on this basis. The diameter of each pixel was44μm with a50μm pitch.
metadata_83光电系统实验室
KeywordAlloying Fabrication Gallium Heterojunctions Optoelectronic Devices Pixels
Subject Area光电子学
Indexed ByEI
Language中文
Date Available2012-06-14
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23090
Collection光电系统实验室
Corresponding AuthorYan, T.(tingjing.yan@gmail.com)
Recommended Citation
GB/T 7714
Yan, Tingjing,Chong, Ming,Zhao, Degang,et al. Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector[J]. Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,2011,40(1):32-35.
APA Yan, Tingjing,Chong, Ming,Zhao, Degang,Zhang, Shuang,Chen, Lianghui,&Yan, T..(2011).Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector.Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering,40(1),32-35.
MLA Yan, Tingjing,et al."Fabrication of246 nm back-illuminated AlGaN solar-blind ultraviolet p-i-n photodetector".Hongwai yu Jiguang Gongcheng/Infrared and Laser Engineering 40.1(2011):32-35.
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