SEMI OpenIR  > 中科院半导体材料科学重点实验室
一种提高光栅外腔激光器光学质量的方法
吕雪芹; 金鹏; 王占国
Rights Holder中国科学院半导体研究所
Date Available2011-08-31
Country中国
Subtype发明
Abstract本发明公开了一种提高光栅外腔激光器光学质量的方法,该方法是在现有光路(2)中安装一光阑(1),进而提高光栅外腔激光器的光学质量,特别是减小光谱线宽。本发明提供的这种提高光栅外腔激光器光学质量、特别是减小光谱线宽的方法,简单、有效,具有较强的实际应用价值。
metadata_83中科院半导体材料科学重点实验室
Patent NumberCN200910236704.8
Language中文
Status公开
Application NumberCN200910236704.8
Patent Agent周国城
Document Type专利
Identifierhttp://ir.semi.ac.cn/handle/172111/22251
Collection中科院半导体材料科学重点实验室
Recommended Citation
GB/T 7714
吕雪芹,金鹏,王占国. 一种提高光栅外腔激光器光学质量的方法. CN200910236704.8.
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