Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell

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	Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell
	Deng Qingwen; Wang Xiaoliang; Xiao Hongling; Ma Zeyu; Zhang Xiaobin; Hou Qifeng; Li Jinmin; Wang Zhanguo
	2010
Source Publication	Journal of Semiconductors
Volume	31 Issue:10 Pages:103003-1-103003-5
Abstract	A solar cell with a novel structure is investigated by means of the analysis of microelectronic and photonic structure (AMPS). The power conversion efficiency is investigated with the variations in interface recombination velocity, thicknesses of p-type layer, intrinsic layer, n-type layer, and doping density. Results show that it is available and preferable in theory to employ a-SiC: H as a window layer in p-a-SiC: H/i-a-Si: H/n-μc-Si solar cells, and provide a new approach to improving the power conversion efficiency of amorphous silicon solar cells
metadata_83	半导体材料科学中心
Subject Area	半导体材料
Funding Organization	Knowledge Innovation Engineering of the Chinese Academy of Sciences,National Natural Science Foundation of China,State Key Development Program for Basic Research of China,Knowledge Innovation Program of the Chinese Academy of Sciences
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:4041724
Date Available	2011-08-16
Citation statistics	Cited Times:3[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/21668
Collection	半导体材料科学中心
Recommended Citation GB/T 7714	Deng Qingwen,Wang Xiaoliang,Xiao Hongling,et al. Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell[J]. Journal of Semiconductors,2010,31(10):103003-1-103003-5.
APA	Deng Qingwen.,Wang Xiaoliang.,Xiao Hongling.,Ma Zeyu.,Zhang Xiaobin.,...&Wang Zhanguo.(2010).Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell.Journal of Semiconductors,31(10),103003-1-103003-5.
MLA	Deng Qingwen,et al."Theoretical investigation of efficiency of a p-a-SiC: H/i-a-Si: H/n-μ c-Si solar cell".Journal of Semiconductors 31.10(2010):103003-1-103003-5.

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