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Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜
苏少坚; 汪巍; 张广泽; 胡炜玄; 白安琪; 薛春来; 左玉华; 成步文; 王启明
2011
Source Publication物理学报
Volume60Issue:2Pages:028101-1-028101-5
Abstract使用低、高温两步法生长的高质量Ge薄膜作为缓冲层, 在Si(001)衬底上采用分子束外延法生长出Ge_(0.975) Sn_(0.025)合金薄膜.X射线双晶衍射和卢瑟福背散射谱等测试结果表明, Ge_(0.975)Sn_(0.025)合金薄膜具有很好的晶体质量, 并且没有发生Sn表面分凝.另外, Ge_(0.975)_Sn_(0.025)合金薄膜在500℃下具有很好的热稳定性, 有望在Si基光电器件中得到应用
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organization国家重点基础研究发展计划,国家自然科学基金,中国科学院知识创新工程青年人才领域前沿项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:4120476
Date Available2011-08-16
Citation statistics
Cited Times:6[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21516
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
苏少坚,汪巍,张广泽,等. Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜[J]. 物理学报,2011,60(2):028101-1-028101-5.
APA 苏少坚.,汪巍.,张广泽.,胡炜玄.,白安琪.,...&王启明.(2011).Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜.物理学报,60(2),028101-1-028101-5.
MLA 苏少坚,et al."Si(001)衬底上分子束外延生长Ge_(0.975)Sn_(0.025)合金薄膜".物理学报 60.2(2011):028101-1-028101-5.
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