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High contrast ratio, high uniformity multiple quantum well spatial light modulators
Huang Yuyang; Liu H C; Wasilewski Z R; Buchanan M; Laframboise S R; Yang Chen; Cui Guoxin; Bian Lifeng; Yang Hui; Zhang Yaohui
2010
Source PublicationJournal of Semiconductors
Volume31Issue:3Pages:62-65
AbstractOur latest research results on GaAs-AlGaAs multiple quantum well spatial light modulators are presented.The thickness uniformity of the epitaxial layers across the 3-inch wafer grown by our molecular beam epitaxy is better than 0.1% and the variation of cavity resonance wavelength within the wafer is only 0.9 nm. A contrast ratio (CR) of 102 by varying bias voltage from 0 to 6.7 V is achieved after fine tuning the cavity by etching an adjust layer. Both theoretical and experimental results demonstrate that incorporating an adjust layer is an effective tuning method for obtaining high CR.
metadata_83集成光电子学国家重点实验室
Subject Area光电子学
Funding Organizationthe Suzhou International Cooperation Fund, China,the President Fund of CAS,the International Collaboration Plan for Science and Technology of the Chinese Ministry of Science and Technology
Indexed ByCSCD
Language英语
CSCD IDCSCD:3873596
Date Available2011-08-16
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Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/21510
Collection集成光电子学国家重点实验室
Recommended Citation
GB/T 7714
Huang Yuyang,Liu H C,Wasilewski Z R,et al. High contrast ratio, high uniformity multiple quantum well spatial light modulators[J]. Journal of Semiconductors,2010,31(3):62-65.
APA Huang Yuyang.,Liu H C.,Wasilewski Z R.,Buchanan M.,Laframboise S R.,...&Zhang Yaohui.(2010).High contrast ratio, high uniformity multiple quantum well spatial light modulators.Journal of Semiconductors,31(3),62-65.
MLA Huang Yuyang,et al."High contrast ratio, high uniformity multiple quantum well spatial light modulators".Journal of Semiconductors 31.3(2010):62-65.
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