SiO2基Mach-Zehnder型传感芯片的制备与敏感性研究

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	SiO2基Mach-Zehnder型传感芯片的制备与敏感性研究
	吴远大; 姜婷; 安俊明; 李建光; 王玥; 王红杰; 胡雄伟
	2011
Source Publication	光电子·激光
Volume	22 Issue:2 Pages:159-162
Contribution Rank	中科院半导体所知识创新工程前沿方向资助项目,国家自然科学基金资助项目,国家
metadata_83	光电子研究发展中心
Subject Area	光电子学
Indexed By	CSCD
CSCD ID	CSCD:4146680
Date Available	2011-08-04
Citation statistics	Cited Times:1[CSCD] [CSCD Record]
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/21472
Collection	光电子研究发展中心
Recommended Citation GB/T 7714	吴远大,姜婷,安俊明,等. SiO2基Mach-Zehnder型传感芯片的制备与敏感性研究[J]. 光电子·激光,2011,22(2):159-162.
APA	吴远大.,姜婷.,安俊明.,李建光.,王玥.,...&胡雄伟.(2011).SiO2基Mach-Zehnder型传感芯片的制备与敏感性研究.光电子·激光,22(2),159-162.
MLA	吴远大,et al."SiO2基Mach-Zehnder型传感芯片的制备与敏感性研究".光电子·激光 22.2(2011):159-162.

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