SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长
陆大成; 汪度; 刘祥林; 万寿科; 王玉田
1992
Source Publication半导体学报
Volume13Issue:9Pages:584
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/20257
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陆大成,汪度,刘祥林,等. Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长[J]. 半导体学报,1992,13(9):584.
APA 陆大成,汪度,刘祥林,万寿科,&王玉田.(1992).Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长.半导体学报,13(9),584.
MLA 陆大成,et al."Ga(1-x)InxSb/GaSb应变层超晶格的MOVPE生长".半导体学报 13.9(1992):584.
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