SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs和InGaAs/GaAs窄量子阱中激子线宽与温度的关系
金世荣; 褚君浩; 汤定元; 罗晋生; 徐仲英; 罗昌平; 袁之良; 许继宗; 郑宝真
1996
Source Publication红外与毫米波学报
Volume15Issue:4Pages:291
Abstract研究了具有不同阱宽的GaAs/AlGaAs和InGaAs/AlGaAs窄量子阱结构中激子线宽与温度的关系,发现在低温范围内,声学声子的线性散射系数随着阱宽的减小而增加,对实验结果作了讨论。
metadata_83中科院上海技术物理所;西安交通大学微电子研究室;中科院半导体所
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:322914
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19629
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
金世荣,褚君浩,汤定元,等. GaAs/AlGaAs和InGaAs/GaAs窄量子阱中激子线宽与温度的关系[J]. 红外与毫米波学报,1996,15(4):291.
APA 金世荣.,褚君浩.,汤定元.,罗晋生.,徐仲英.,...&郑宝真.(1996).GaAs/AlGaAs和InGaAs/GaAs窄量子阱中激子线宽与温度的关系.红外与毫米波学报,15(4),291.
MLA 金世荣,et al."GaAs/AlGaAs和InGaAs/GaAs窄量子阱中激子线宽与温度的关系".红外与毫米波学报 15.4(1996):291.
Files in This Item:
File Name/Size DocType Version Access License
5913.pdf(370KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[金世荣]'s Articles
[褚君浩]'s Articles
[汤定元]'s Articles
Baidu academic
Similar articles in Baidu academic
[金世荣]'s Articles
[褚君浩]'s Articles
[汤定元]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[金世荣]'s Articles
[褚君浩]'s Articles
[汤定元]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.