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GaAs/AIGaAs光子平行存贮器的性能
夏永伟; 滕学公; 李国花; 樊志军; 王守武
1996
Source Publication半导体学报
Volume17Issue:2Pages:131
Abstract报告用PnpN型GaAs/AlGaAs结构的光电双稳器件形成的光子平行存贮器单元器件和4×4阵列器件的特性。单元器件的最小维持功耗小于30μW。使器件从“关闭”态翻转到“导通”态所需的光触发功率小于80μW。单元面积160×160μm、间距40μm的存贮器4×4原理性阵列已经研制成功,这是0.85μm波长范围的光子平行存贮器的首次报道。
metadata_83中科院半导体所
Subject Area微电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:334527
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19587
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
夏永伟,滕学公,李国花,等. GaAs/AIGaAs光子平行存贮器的性能[J]. 半导体学报,1996,17(2):131.
APA 夏永伟,滕学公,李国花,樊志军,&王守武.(1996).GaAs/AIGaAs光子平行存贮器的性能.半导体学报,17(2),131.
MLA 夏永伟,et al."GaAs/AIGaAs光子平行存贮器的性能".半导体学报 17.2(1996):131.
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