SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth of GaN on magnesium aluminate substrate by LP-MOVPE
Duan SK(段树坤); Teng XH(滕学会); Li GH(李国华); Wang YT(王玉田); Hang Y(杭寅)
1997
Source Publication半导体学报
Volume18Issue:10Pages:787
metadata_83中科院半导体所;中科院安徽光学精密机械所
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:358522
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19497
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Duan SK,Teng XH,Li GH,et al. Growth of GaN on magnesium aluminate substrate by LP-MOVPE[J]. 半导体学报,1997,18(10):787.
APA 段树坤,滕学会,李国华,王玉田,&杭寅.(1997).Growth of GaN on magnesium aluminate substrate by LP-MOVPE.半导体学报,18(10),787.
MLA 段树坤,et al."Growth of GaN on magnesium aluminate substrate by LP-MOVPE".半导体学报 18.10(1997):787.
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