Properties of GaSb substrate wafers for MOCVD III-V antimonids

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Properties of GaSb substrate wafers for MOCVD III-V antimonids
	Peng RW(彭瑞伍); Ding YQ(丁永庆); Xu CM(徐晨梅); Wang ZG(王占国)
	1998
Source Publication	Rare Metals
Volume	17 Issue:3 Pages:161
metadata_83	中科院上海冶金所;中科院半导体所
Subject Area	半导体材料
Indexed By	CSCD
Language	英语
CSCD ID	CSCD:422720
Date Available	2010-11-23
Citation statistics
Document Type	期刊论文
Identifier	http://ir.semi.ac.cn/handle/172111/19295
Collection	中国科学院半导体研究所（2009年前）
Recommended Citation GB/T 7714	Peng RW,Ding YQ,Xu CM,et al. Properties of GaSb substrate wafers for MOCVD III-V antimonids[J]. Rare Metals,1998,17(3):161.
APA	彭瑞伍,丁永庆,徐晨梅,&王占国.(1998).Properties of GaSb substrate wafers for MOCVD III-V antimonids.Rare Metals,17(3),161.
MLA	彭瑞伍,et al."Properties of GaSb substrate wafers for MOCVD III-V antimonids".Rare Metals 17.3(1998):161.

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