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X射线回摆曲线定量检测SI-GaAs势光晶片的亚表面损伤层厚度
曹福年; 卜俊鹏; 吴让元; 郑红军; 惠峰; 白玉珂; 刘明焦; 何宏家
1998
Source Publication半导体学报
Volume19Issue:8Pages:635
Abstract通过测量SI-GaAs抛光晶片及其本体(腐蚀了晶片的亚表面损伤层)的X射线回摆曲线FWHM,与抛光晶片的TEM观测相结合,作出晶片回摆曲线FWHM的比率R与TEM观测的晶征亚表面损伤层厚度D的关系曲线,建立了一种定量检测SI-GaAa抛光晶片的片表面损伤层厚度技术,文中将对这种技术进行描述并作讨论。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:423682
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19203
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
曹福年,卜俊鹏,吴让元,等. X射线回摆曲线定量检测SI-GaAs势光晶片的亚表面损伤层厚度[J]. 半导体学报,1998,19(8):635.
APA 曹福年.,卜俊鹏.,吴让元.,郑红军.,惠峰.,...&何宏家.(1998).X射线回摆曲线定量检测SI-GaAs势光晶片的亚表面损伤层厚度.半导体学报,19(8),635.
MLA 曹福年,et al."X射线回摆曲线定量检测SI-GaAs势光晶片的亚表面损伤层厚度".半导体学报 19.8(1998):635.
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