SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs/AlGaAs量子点阵的制备及其荧光特性
王杏华; 李国华; 李承芳; 李月霞; 程文超; 宋爱民; 刘剑; 王志明
1998
Source Publication发光学报
Volume19Issue:3Pages:202
Abstract采用电子束曝光和反应离子刻蚀的工艺,将GaAs/AlGaAs量子阱外延材料制成量子点阵,其光荧光谱显示出蓝移,并且蓝移量随着量子点直径尺寸的减少而增大。
metadata_83中科院半导体所
Subject Area半导体物理
Indexed ByCSCD
Language中文
CSCD IDCSCD:432467
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19177
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王杏华,李国华,李承芳,等. GaAs/AlGaAs量子点阵的制备及其荧光特性[J]. 发光学报,1998,19(3):202.
APA 王杏华.,李国华.,李承芳.,李月霞.,程文超.,...&王志明.(1998).GaAs/AlGaAs量子点阵的制备及其荧光特性.发光学报,19(3),202.
MLA 王杏华,et al."GaAs/AlGaAs量子点阵的制备及其荧光特性".发光学报 19.3(1998):202.
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