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GaAs化学机械抛光引入亚表面损伤层的分析
郑红军; 卜俊鹏; 何宏家; 吴让元; 曹福年; 白玉珂; 惠峰
1999
Source Publication固体电子学研究与进展
Volume19Issue:1Pages:111
Abstract采用TEM、X-ray Rocking Curve等测试的方法,对GaAs晶片化学机械抛光后亚表面损伤层引入的深度进行了分析,探讨了碱性SiO_2胶体水溶液加入不同浓度的电解质(NaOCl)后所发生胶粒带电程度的变化,从胶体理论的角度解释了SiO_2胶体溶液不稳定对GaAs抛光晶片亚表面损伤层的影响。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:490384
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/19059
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑红军,卜俊鹏,何宏家,等. GaAs化学机械抛光引入亚表面损伤层的分析[J]. 固体电子学研究与进展,1999,19(1):111.
APA 郑红军.,卜俊鹏.,何宏家.,吴让元.,曹福年.,...&惠峰.(1999).GaAs化学机械抛光引入亚表面损伤层的分析.固体电子学研究与进展,19(1),111.
MLA 郑红军,et al."GaAs化学机械抛光引入亚表面损伤层的分析".固体电子学研究与进展 19.1(1999):111.
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