SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Photonic AND Gate Based on Hybrid Integration of GaAs VCSEL and GaAs MISS
Kang XJ(康学军); Lin SM(林世鸣); Liao QW(廖奇为); Gao JH(高俊华); Cheng P(程澎); Liu SA(刘世安); Wang QM(王启明); Du GT(杜国同); Liu Y(刘颖); Li XM(李雪梅)
1999
Source Publication半导体学报
Volume717Issue:0
metadata_83中科院半导体所;吉林大学
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:532564
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18891
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Kang XJ,Lin SM,Liao QW,et al. Photonic AND Gate Based on Hybrid Integration of GaAs VCSEL and GaAs MISS[J]. 半导体学报,1999,717(0).
APA 康学军.,林世鸣.,廖奇为.,高俊华.,程澎.,...&李雪梅.(1999).Photonic AND Gate Based on Hybrid Integration of GaAs VCSEL and GaAs MISS.半导体学报,717(0).
MLA 康学军,et al."Photonic AND Gate Based on Hybrid Integration of GaAs VCSEL and GaAs MISS".半导体学报 717.0(1999).
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