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Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing
Li C(李成); Yang QQ(杨沁清); Wang HJ(王红杰); Luo LP(罗丽萍); Cheng BW(成步文); Yu JZ(余金中); Wang QM(王启明); Chen YH(陈涌海); Wang JZ(王吉政)
2000
Source Publication半导体学报
Volume21Issue:1Pages:18
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:532645
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18845
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li C,Yang QQ,Wang HJ,et al. Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing[J]. 半导体学报,2000,21(1):18.
APA 李成.,杨沁清.,王红杰.,罗丽萍.,成步文.,...&王吉政.(2000).Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing.半导体学报,21(1),18.
MLA 李成,et al."Photocurrent Measurem entof Si_(1-x)Ge_x/Si Multiple Quantum Wells With Ion Im plantationand Therm al Annealing".半导体学报 21.1(2000):18.
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