SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells
Cheng BW(成步文); Li DZ(李代宗); Huang CJ(黄昌俊); Zhang CH(张春晖); Yu Z(于卓); Yu JZ(余金中); Wang QM(王启明)
2000
Source Publication半导体学报
Volume21Issue:4Pages:313
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:532700
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18809
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Cheng BW,Li DZ,Huang CJ,et al. Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells[J]. 半导体学报,2000,21(4):313.
APA 成步文.,李代宗.,黄昌俊.,张春晖.,于卓.,...&王启明.(2000).Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells.半导体学报,21(4),313.
MLA 成步文,et al."Quantum Confinement Effects in Strained Si Ge/Si Multiple Quantum Wells".半导体学报 21.4(2000):313.
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