SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Si_(1-x-y)Ge_xC_y三元系材料的应变补偿特性
于卓; 李代宗; 成步文; 黄昌俊; 雷震霖; 余金中; 王启明; 梁骏吾
2001
Source Publication半导体学报
Volume22Issue:1Pages:53
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:532876
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18727
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
于卓,李代宗,成步文,等. Si_(1-x-y)Ge_xC_y三元系材料的应变补偿特性[J]. 半导体学报,2001,22(1):53.
APA 于卓.,李代宗.,成步文.,黄昌俊.,雷震霖.,...&梁骏吾.(2001).Si_(1-x-y)Ge_xC_y三元系材料的应变补偿特性.半导体学报,22(1),53.
MLA 于卓,et al."Si_(1-x-y)Ge_xC_y三元系材料的应变补偿特性".半导体学报 22.1(2001):53.
Files in This Item:
File Name/Size DocType Version Access License
5411.pdf(201KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[于卓]'s Articles
[李代宗]'s Articles
[成步文]'s Articles
Baidu academic
Similar articles in Baidu academic
[于卓]'s Articles
[李代宗]'s Articles
[成步文]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[于卓]'s Articles
[李代宗]'s Articles
[成步文]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.