SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6
Cheng Buwen; Li Daizong; Huang Changjun; Zhang Chunhui; Yu Zhuo; Wang Yutian; Yu Jinzhong; Yang Qinqing; Wang Qiming
2000
Source PublicationSemiconductor Photonics and Technology
Volume6Issue:3Pages:134
metadata_83中科院半导体所
Subject Area光电子学
Funding Organization国家自然科学基金,国家863计划
Indexed ByCSCD
Language英语
CSCD IDCSCD:533210
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18603
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Cheng Buwen,Li Daizong,Huang Changjun,et al. Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6[J]. Semiconductor Photonics and Technology,2000,6(3):134.
APA Cheng Buwen.,Li Daizong.,Huang Changjun.,Zhang Chunhui.,Yu Zhuo.,...&Wang Qiming.(2000).Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6.Semiconductor Photonics and Technology,6(3),134.
MLA Cheng Buwen,et al."Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6".Semiconductor Photonics and Technology 6.3(2000):134.
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