SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
GaAs研磨片化学腐蚀均匀性的分析
郑红军; 卜俊鹏; 尹玉华; 白玉柯
2000
Source Publication功能材料与器件学报
Volume6Issue:4Pages:335
Abstract采用不同的化学腐蚀方法,探讨了不同体系成份、温度、腐蚀过程的吸放热对晶片均匀性的影响,提出氨水系列,进行晶片化学腐蚀,晶片厚度均匀性11.47%,为下步工艺提供平整度较好的晶片。
metadata_83中科院半导体所
Subject Area半导体材料
Indexed ByCSCD
Language中文
CSCD IDCSCD:608051
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18435
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
郑红军,卜俊鹏,尹玉华,等. GaAs研磨片化学腐蚀均匀性的分析[J]. 功能材料与器件学报,2000,6(4):335.
APA 郑红军,卜俊鹏,尹玉华,&白玉柯.(2000).GaAs研磨片化学腐蚀均匀性的分析.功能材料与器件学报,6(4),335.
MLA 郑红军,et al."GaAs研磨片化学腐蚀均匀性的分析".功能材料与器件学报 6.4(2000):335.
Files in This Item:
File Name/Size DocType Version Access License
5265.pdf(204KB) 限制开放--Application Full Text
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Google Scholar
Similar articles in Google Scholar
[郑红军]'s Articles
[卜俊鹏]'s Articles
[尹玉华]'s Articles
Baidu academic
Similar articles in Baidu academic
[郑红军]'s Articles
[卜俊鹏]'s Articles
[尹玉华]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[郑红军]'s Articles
[卜俊鹏]'s Articles
[尹玉华]'s Articles
Terms of Use
No data!
Social Bookmark/Share
All comments (0)
No comment.
 

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.