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ECR plasma CVD法淀积980 nm大功率半导体激光器端面光学膜技术
谭满清; 茅冬生; 陈良惠; 李玉璋
1999
Source Publication中国激光
Volume26Issue:9Pages:811
Abstract介绍了电子回旋共振等离子体化学气相沉积(简称ECR plasma CVD)法淀积980nm大功率半导体激光器两端面光学膜的工艺条件,探索了膜系监控的方法和优越性,讨论了这种淀积方法的优点和淀积的光学膜的优良特性。
metadata_83中科院半导体所
Subject Area光电子学
Indexed ByCSCD
Language中文
CSCD IDCSCD:660368
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18311
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
谭满清,茅冬生,陈良惠,等. ECR plasma CVD法淀积980 nm大功率半导体激光器端面光学膜技术[J]. 中国激光,1999,26(9):811.
APA 谭满清,茅冬生,陈良惠,&李玉璋.(1999).ECR plasma CVD法淀积980 nm大功率半导体激光器端面光学膜技术.中国激光,26(9),811.
MLA 谭满清,et al."ECR plasma CVD法淀积980 nm大功率半导体激光器端面光学膜技术".中国激光 26.9(1999):811.
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