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室温铁磁性半导体Mn_xGa_(1-x)Sb
陈诺夫; 张富强; 杨君玲; 刘志凯; 杨少延; 柴春林; 王占国; 胡文瑞; 林兰英
2002
Source Publication科学通报
Volume47Issue:24Pages:1863-1864
Abstract采用离子注入、离子沉积及后期退火方法制备了稀磁半导体单晶Mn_xGa_(1-x)Sb,在室温下(300 K)获得了单晶的磁滞回线。用X射线衍射方法分析了铁磁性半导体单晶Mn_xGa_(1-x)Sb的结构,用电化学C-V法分析了单晶的载流子浓度分布。由X射线衍射得知,Mn_xGa_(1-x)Sb中Mn含量逐渐由近表面处的x = 0.09下降到晶片内部的x = 0。电化学C-V测得单晶的空穴浓度高达1 * 10~(21)cm~(-3),表明Mn_xGa_(1-x)Sb单晶中大部分Mn原子占据Ga位,起受主作用。
metadata_83中国科学院半导体所;中国科学院力学所
Subject Area半导体材料
Funding Organization国家自然科学基金(批准号:6 176 1),国家重大基础研究计划(批准号:G2 683,G2 365)资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:946065
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18151
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈诺夫,张富强,杨君玲,等. 室温铁磁性半导体Mn_xGa_(1-x)Sb[J]. 科学通报,2002,47(24):1863-1864.
APA 陈诺夫.,张富强.,杨君玲.,刘志凯.,杨少延.,...&林兰英.(2002).室温铁磁性半导体Mn_xGa_(1-x)Sb.科学通报,47(24),1863-1864.
MLA 陈诺夫,et al."室温铁磁性半导体Mn_xGa_(1-x)Sb".科学通报 47.24(2002):1863-1864.
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