SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide
Fang Gaozhan; Xiao Jianwei; Ma Xiaoyu; Feng Xiaoming; Wang Xiaowei; Liu Yuanyuan; Liu Bin; Tan Manqing; Lan Yongsheng
2002
Source Publication半导体学报
Volume23Issue:8Pages:809-812
AbstractThe 808nm laser diodes with a broad waveguide are designed and fabricated. The thickness of the Al_(0.35)-Ga_(0.65)As waveguide is increased to 0.9μm. In order to suppress the super modes, the thickness of the Al_(0.55)Ga_(0.45)As cladding layers is reduced to only 0.7μm while keeping the transverse radiation losses of the fundamental mode below 0.2cm~(-1). The structures are grown by metal organic chemical vapour deposition. The devices show excellent performances. The maximum output power of 10.2W in the 100μm broad-area laser diodes is obtained.
metadata_83institute of semiconductors, the chinese academy of sciences
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:976949
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/18069
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Fang Gaozhan,Xiao Jianwei,Ma Xiaoyu,et al. High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide[J]. 半导体学报,2002,23(8):809-812.
APA Fang Gaozhan.,Xiao Jianwei.,Ma Xiaoyu.,Feng Xiaoming.,Wang Xiaowei.,...&Lan Yongsheng.(2002).High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide.半导体学报,23(8),809-812.
MLA Fang Gaozhan,et al."High Power 808nm AlGaAs/GaAs Quantum Well Laser Diodes with Broad Waveguide".半导体学报 23.8(2002):809-812.
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