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基于单个和级联电吸收调制器超短光脉冲的产生
王安斌; 伍剑; 张帆; 林金桐; 赵玲娟; 王圩
2004
Source Publication光子学报
Volume33Issue:1Pages:53-56
Abstract为研究电吸收调制器(EAM)产生超短光脉冲的性能,在考虑电吸收调制器频率响应的基础上,通过数值模拟和实验研究的方法,从理论和实验上研究了基于国产单个和级联电吸收调制器的超短光脉冲产生,实验和理论相符.基于单EAM可以产生占空比近12%的短脉冲,级联EAM可产生占空比为8%的短脉冲.
metadata_83北京邮电大学光通信中心66信箱;中国科学院半导体研究所
Subject Area光电子学
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:1507601
Date Available2010-11-23
Citation statistics
Cited Times:1[CSCD]   [CSCD Record]
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17549
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
王安斌,伍剑,张帆,等. 基于单个和级联电吸收调制器超短光脉冲的产生[J]. 光子学报,2004,33(1):53-56.
APA 王安斌,伍剑,张帆,林金桐,赵玲娟,&王圩.(2004).基于单个和级联电吸收调制器超短光脉冲的产生.光子学报,33(1),53-56.
MLA 王安斌,et al."基于单个和级联电吸收调制器超短光脉冲的产生".光子学报 33.1(2004):53-56.
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