SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs
Wang Shurong; Liu Zhihong; Wang Wei; Zhu Hongliang; Zhang Ruiying; Ding Ying; Zhao Lingjuan; Zhou Fan; Wang Lufeng
2004
Source Publication半导体学报
Volume25Issue:8Pages:898-902
AbstractA semiconductor optical amplifier gate based on tensile-strained quasi-bulk InGaAs is developed. At injection current of 80mA,a 3dB optical bandwidth of more than 85nm is achieved due to dominant band-filling effect.Moreover, the most important is that very low polarization dependence of gain (<0. 7dB),fiber-to-fiber lossless operation current (70~90mA) and a high extinction ratio (>50dB) are simultaneously obtained over this wide 3dB optical bandwidth (1520~1609nm) which nearly covers the spectral region of the whole C band (1525~1565nm)and the whole L band (1570~ 1610nm). The gating time is also improved by decreasing carrier lifetime. The wideband polarization-insensitive SOA-gate is promising for use in future dense wavelength division multiplexing (DWDM) communication systems.
metadata_83the center of optoelectronics research & development, institute of semiconductors, the chinese academy of sciences
Subject Area半导体材料
Funding Organization国家重点基础研究发展规划,国家自然科学基金
Indexed ByCSCD
Language英语
CSCD IDCSCD:1701548
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17353
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Shurong,Liu Zhihong,Wang Wei,et al. Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs[J]. 半导体学报,2004,25(8):898-902.
APA Wang Shurong.,Liu Zhihong.,Wang Wei.,Zhu Hongliang.,Zhang Ruiying.,...&Wang Lufeng.(2004).Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs.半导体学报,25(8),898-902.
MLA Wang Shurong,et al."Wide-Band Polarization-Independent Semiconductor Optical Amplifier Gate with Tensile-Strained Quasi-Bulk InGaAs".半导体学报 25.8(2004):898-902.
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