SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
等离子体增强化学气相沉积法实现硅纳米线掺硼
曾湘波; 廖显伯; 王博; 刁宏伟; 戴松涛; 向贤碧; 常秀兰; 徐艳月; 胡志华; 郝会颖; 孔光临
2004
Source Publication物理学报
Volume53Issue:12Pages:4410-4413
Abstract用等离子体增强化学气相沉积(PECVD)方法成功实现硅纳米线的掺B.选用Si片作衬底,硅烷(SiH4)作硅源,硼烷(B2H6)作掺杂气体, Au作催化剂,生长温度440℃.基于气-液-固(VLS)机制,探讨了掺B硅纳米线可能的生长机制.PECVD法化学成分配比更灵活,更容易实现纳米线掺杂,进一步有望生长硅纳米线pn结,为研制纳米量级器件提供技术基础.……
metadata_83中国科学院半导体研究所;清华大学物理系
Subject Area半导体材料
Funding Organization国家自然科学基金
Indexed ByCSCD
Language中文
CSCD IDCSCD:1810962
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17259
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
曾湘波,廖显伯,王博,等. 等离子体增强化学气相沉积法实现硅纳米线掺硼[J]. 物理学报,2004,53(12):4410-4413.
APA 曾湘波.,廖显伯.,王博.,刁宏伟.,戴松涛.,...&孔光临.(2004).等离子体增强化学气相沉积法实现硅纳米线掺硼.物理学报,53(12),4410-4413.
MLA 曾湘波,et al."等离子体增强化学气相沉积法实现硅纳米线掺硼".物理学报 53.12(2004):4410-4413.
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