SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Device
Li Jianming; Chong Ming; Xu Jiadong; Hu Chuanxian; Duan Xiaofeng; Gao Min; Wang Fenglian
2004
Source PublicationSemiconductor Photonics and Technology
Volume10Issue:2Pages:101-103
AbstractBased on the idea of tilting a photoelectric conversion device,the monocrystalline silicon p-n junction device was tilted to make light incident upon the device at an angle of 45° with the normal of the device surface,resulting in infrared multiple-internal-reflection inside the device.The internal reflection leads to path length increase of infrared light,making the enhancement of infrared absorption of the device.An increase of 11% in energy conversion efficiency has been obtained through tilting the device.
metadata_83institute of semiconductors,chinese academy of sciences;institute of physics,chinese academy of sciences
Subject Area光电子学
Funding OrganizationPresident Foundation of Chinese Academy of Sciences
Indexed ByCSCD
Language英语
CSCD IDCSCD:1845710
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17237
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Li Jianming,Chong Ming,Xu Jiadong,et al. Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Device[J]. Semiconductor Photonics and Technology,2004,10(2):101-103.
APA Li Jianming.,Chong Ming.,Xu Jiadong.,Hu Chuanxian.,Duan Xiaofeng.,...&Wang Fenglian.(2004).Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Device.Semiconductor Photonics and Technology,10(2),101-103.
MLA Li Jianming,et al."Photoelectric Conversion Efficiency Enhanced by Tilting Monocrystalline Silicon Photovoltaic Device".Semiconductor Photonics and Technology 10.2(2004):101-103.
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