SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array
Ma Jiehui; Fang Gaozhan; Lan Yongsheng; Ma Xiaoyu
2005
Source Publication半导体学报
Volume26Issue:3Pages:476-479
AbstractA novel AIN monolithic microchannel cooled heatsink for high power laser diode array is introduced.The high power stack laser diode array with an AIN monolithic microchannel heatsink is fabricated and tested.The thermal impedance of a 10 stack laser diode array is 0.121℃/W.The pitch between two adjacent bars is 1.17mm.The power level of 611W is achieved under the 20% duty factor condition at an emission wavelength around 808nm.
metadata_83institute of semiconductors,chinese academy of sciences
Subject Area半导体器件
Indexed ByCSCD
Language英语
CSCD IDCSCD:1958022
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17117
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Ma Jiehui,Fang Gaozhan,Lan Yongsheng,et al. AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array[J]. 半导体学报,2005,26(3):476-479.
APA Ma Jiehui,Fang Gaozhan,Lan Yongsheng,&Ma Xiaoyu.(2005).AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array.半导体学报,26(3),476-479.
MLA Ma Jiehui,et al."AIN Monolithic Microchannel Cooled Heatsink for High Power Laser Diode Array".半导体学报 26.3(2005):476-479.
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