SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Widely Tunable Sampled-Grating DBR Laser
Kang Qiang; Zhao Lingjuan; Zhang Jing; Zhou Fan; Wang Baojun; Wang Lufeng; Wang Wei
2005
Source Publication半导体学报
Volume26Issue:5Pages:853-856
AbstractThe 3-section SG-DBR tunable laser is fabricated using an ion implantation quantum-well intermixing process. The over 30nm discontinuous tuning range is achieved with the SMRS greater than 30dB.
metadata_83institute of semiconductors, chines academy of sciences
Subject Area半导体材料
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2033987
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17025
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Kang Qiang,Zhao Lingjuan,Zhang Jing,et al. Widely Tunable Sampled-Grating DBR Laser[J]. 半导体学报,2005,26(5):853-856.
APA Kang Qiang.,Zhao Lingjuan.,Zhang Jing.,Zhou Fan.,Wang Baojun.,...&Wang Wei.(2005).Widely Tunable Sampled-Grating DBR Laser.半导体学报,26(5),853-856.
MLA Kang Qiang,et al."Widely Tunable Sampled-Grating DBR Laser".半导体学报 26.5(2005):853-856.
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