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掺铒纳米晶硅和掺铒非晶纳米硅薄膜的发光性质
陈维德; 陈长勇; 卞留芳
2005
Source Publication发光学报
Volume26Issue:5Pages:647-650
Abstract采用等离子体增强化学气相沉积(PECVD)方法制备含有纳米晶硅的SiO2(NCSO)和含有非晶纳米硅颗粒的氢化非晶氧化硅(a-SiOx:H)薄膜.采用离子注入和高温退火方法将稀土Fr掺入含有纳米晶硅(nc-Si)和非晶纳米硅(a-n-Si)颗粒的基体中.利用IFS/20HR傅里叶变换红外光谱仪和微区拉曼散射光谱仪研究含有纳米晶硅和非晶纳米硅颗粒的薄膜掺稀土前后的发光特性.结果表明来自nc-Si在800 nm的发光强度比来自a-SiOx:H基体中非晶纳米硅的发光强度高近一个数量级,而来自a-SiOx:H在1.54 μm的发光强度比NCSO高4倍.还研究了掺铒a-SiOx:H薄膜中Si颗粒和Er3+的发光强度随退火温度的变化,结合掺铒纳米晶硅和非晶纳米硅薄膜发光强度随Er掺杂浓度变化和Raman散射等的测量结果,进一步明确指出a-Si颗粒在Er3+的激发中可以起到和nc-Si同样的作用,即作为光吸收介质和敏化剂的作用
metadata_83中国科学院 半导体研究所
Subject Area半导体材料
Funding Organization国家自然科学基金资助项目
Indexed ByCSCD
Language中文
CSCD IDCSCD:2039577
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/17001
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
陈维德,陈长勇,卞留芳. 掺铒纳米晶硅和掺铒非晶纳米硅薄膜的发光性质[J]. 发光学报,2005,26(5):647-650.
APA 陈维德,陈长勇,&卞留芳.(2005).掺铒纳米晶硅和掺铒非晶纳米硅薄膜的发光性质.发光学报,26(5),647-650.
MLA 陈维德,et al."掺铒纳米晶硅和掺铒非晶纳米硅薄膜的发光性质".发光学报 26.5(2005):647-650.
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