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MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC
Wang Xiaoliang; Hu Guoxin; Ma Zhiyong; Xiao Hongling; Wang Cuimei; Luo Weijun; Liu Xinyu; Chen Xiaojuan; Li Jianping; Li Jinmin; Qian He; Wang Zhanguo
2006
Source Publication半导体学报
Volume27Issue:9Pages:1521-1525
AbstractAlGaN/AlN/GaN high electron mobility transistor (HEMT) structures with a high-mobility GaN thin layer as a channel are grown on high resistive 6H-SiC substrates by metalorganic chemical vapor deposition. The HEMT structure exhibits a typical two-dimensional electron gas (2DEG) mobility of 1944cm2/(V · s) at room temperature and 11588cm2/(V· s) at 80K with almost equal 2DEG concentrations of about 1.03 × 1013 cm-2 High crystal quality of the HEMT structures is confirmed by triple-crystal X-ray diffraction analysis. Atomic force microscopy measurements reveal a smooth AlGaN surface with a root-mean-square roughness of 0. 27nm for a scan area of 10μm × 10μm. HEMT devices with 0.8μm gate length and 1.2mm gate width are fabricated using the structures. A maximum drain current density of 957mA/mm and an extrinsic transconductance of 267mS/mm are obtained.
metadata_83institute of semiconductors, chinese academy of sciences;institute of microelectronics, chinese academy of sciences
Subject Area半导体材料
Funding Organization中国科学院知识创新工程重要方向性项目,国家自然科学基金,国家重点基础研究发展规划,国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2433810
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16601
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wang Xiaoliang,Hu Guoxin,Ma Zhiyong,et al. MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC[J]. 半导体学报,2006,27(9):1521-1525.
APA Wang Xiaoliang.,Hu Guoxin.,Ma Zhiyong.,Xiao Hongling.,Wang Cuimei.,...&Wang Zhanguo.(2006).MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC.半导体学报,27(9),1521-1525.
MLA Wang Xiaoliang,et al."MOCVD-Grown AlGaN/AlN/GaN HEMT Structure with High Mobility GaN Thin Layer as Channel on SiC".半导体学报 27.9(2006):1521-1525.
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