SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Structural and Optical Performance of GaN Thick Film Grown by HVPE
Wei Tongbo; Ma Ping; Duan Ruifei; Wang Junxi; Li Jinmin; Liu Zhe; Lin Guoqiang; Zeng Yiping
2007
Source Publication半导体学报
Volume28Issue:1Pages:19-23
AbstractThick GaN films were grown on GaN/sapphire template in a vertical HVPE reactor. Various material characterization techniques,including AFM, SEM, XRD, RBS/Channeling, CL, PL, and XPS, were used to characterize these GaN epitaxial films. It was found that stepped/terraced structures appeared on the film surface,which were indicative of a nearly step-flow mode of growth for the HVPE GaN despite the high growth rate. A few hexagonal pits appeared on the surface, which have strong light emission. After being etched in molten KOH, the wavy steps disappeared and hexagonal pits with {1010} facets appeared on the surface. An EPD of only 8 ×10~6cm~(-2) shows that the GaN film has few dislocations. Both XRD and RBS channeling indicate the high quality of the GaN thick films. Sharp band-edge emission with a full width at half maximum(FWHM)of 67meV was observed, while the yellow and infrared emissions were also found. These emissions are likely caused by native defects and C and O impurities.
metadata_83institute of semiconductors, chinese academy of sciences
Subject Area半导体材料
Funding Organization国家高技术研究发展计划资助项目
Indexed ByCSCD
Language英语
CSCD IDCSCD:2741723
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/16381
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Wei Tongbo,Ma Ping,Duan Ruifei,et al. Structural and Optical Performance of GaN Thick Film Grown by HVPE[J]. 半导体学报,2007,28(1):19-23.
APA Wei Tongbo.,Ma Ping.,Duan Ruifei.,Wang Junxi.,Li Jinmin.,...&Zeng Yiping.(2007).Structural and Optical Performance of GaN Thick Film Grown by HVPE.半导体学报,28(1),19-23.
MLA Wei Tongbo,et al."Structural and Optical Performance of GaN Thick Film Grown by HVPE".半导体学报 28.1(2007):19-23.
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