SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
InP-base resonant tunneling diodes
Han Chunlin; Chen Chen; Zou Penghui; Zhang Yang; Zeng Yiping; Xue Fangshi; Gao Jianfeng; Zhang Zheng; Geng Tao
2009
Source Publication半导体学报
Volume30Issue:6Pages:48-50
AbstractWe have fabricated In_0.53Ga_0.47As/AlAs/InP resonant tunneling diodes (RTDs) based on the air-bridge technology by using electron beam lithography processing.The epitaxial layers of the RTD were grown on semi-insulating (100) InP substrates by molecular beam epitaxy.RTDs with a peak current density of 24.6 kA/cm~2 and a peak-to-valley current ratio of 8.6 at room temperature have been demonstrated.
metadata_83nanjing electronic devices institute;institute of semiconductors,chinese academy of sciences
Subject Area半导体材料
Indexed ByCSCD
Language英语
CSCD IDCSCD:3599569
Date Available2010-11-23
Citation statistics
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15757
Collection中国科学院半导体研究所(2009年前)
Recommended Citation
GB/T 7714
Han Chunlin,Chen Chen,Zou Penghui,et al. InP-base resonant tunneling diodes[J]. 半导体学报,2009,30(6):48-50.
APA Han Chunlin.,Chen Chen.,Zou Penghui.,Zhang Yang.,Zeng Yiping.,...&Geng Tao.(2009).InP-base resonant tunneling diodes.半导体学报,30(6),48-50.
MLA Han Chunlin,et al."InP-base resonant tunneling diodes".半导体学报 30.6(2009):48-50.
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