SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Pressure behavior of deep centers in ZnSxTe1-x alloys
Liu NZ; Li GH; Zhang W; Zhu ZM; Han HX; Wang ZP; Ge WK; Sou IK; Liu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
1999
Conference Name8th International Conference on High Pressure Semiconductor Physics (HPSP-VIII)
Source PublicationPHYSICA STATUS SOLIDI B-BASIC RESEARCH, 211 (1)
Pages163-169
Conference DateAUG 09-13, 1998
Conference PlaceTHESSALONIKI, GREECE
Publication PlaceMUHLENSTRASSE 33-34, D-13187 BERLIN, GERMANY
PublisherWILEY-V C H VERLAG GMBH
ISSN0370-1972
AbstractWe have measured photoluminescence of ZnSxTe1-x alloys (x > 0.7) at 300 K and under hydrostatic pressure up to 7 GPa. The spectra contain only a broad emission band under excitation of the 406.7 nm line. Its pressure coefficients are 47, 62 and 45 meV/GPa for x = 0.98, 0.92 and 0.79 samples, which are about 26%, 7% and 38% smaller than that of the band gap in the corresponding alloys. The Stokes shifts between emission and absorption of the bands were calculated by fitting the pressure dependence of the emission intensity, being 0.29, 0.48 and 0.13 eV for the three samples, respectively. The small pressure coefficient and large Stokes shift indicate that the emission band observed in our samples may correspond to the Te isoelectronic center in the ZnSxTe1-x alloy.
metadata_83chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; hong kong univ sci & technol, dept phys, kowloon, hong kong
KeywordAbsorption-edge Strains Zns
Subject Area半导体物理
Indexed ByCPCI-S
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/15051
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorLiu NZ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Recommended Citation
GB/T 7714
Liu NZ,Li GH,Zhang W,et al. Pressure behavior of deep centers in ZnSxTe1-x alloys[C]. MUHLENSTRASSE 33-34, D-13187 BERLIN, GERMANY:WILEY-V C H VERLAG GMBH,1999:163-169.
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