Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures
Sun BQ; Jiang DS; Pan Z; Li LH; Wu RH; Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
2001
会议名称11th International Conference on Molecular Beam Epitaxy (MBE-XI)
会议录名称JOURNAL OF CRYSTAL GROWTH, 227
页码501-505
会议日期SEP 11-15, 2000
会议地点BEIJING, PEOPLES R CHINA
出版地PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS
出版者ELSEVIER SCIENCE BV
ISSN0022-0248
部门归属chinese acad sci, inst semicond, natl lab superlattices & microstruct, beijing 100083, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要We have investigated transitions above and below band edge of GaNAs/GaAs and InGaNAs/GaAs single quantum wells (QWs) by photoluminescence (PL) as well as by absorption spectra via photovoltaic effects. The interband PL peak is observed to be dominant under high excitation intensity and at low temperature. The broad luminescence band below band edge due to the nitrogen-related potential fluctuations can be effectively suppressed by increasing indium incorporation into InGaNAs. In contrast to InGaNAs/GaAs QWs, the measured interband transition energy of GaNAs/GaAs QWs can be well fitted to the theoretical calculations if a type-II band lineup is assumed. (C) 2001 Elsevier Science B.V. All rights reserved.
关键词Molecular Beam Epitaxy Quantum Wells Semiconducting Iiiv Materials Luminescence Gaasn
学科领域半导体物理
主办者China Natl Nat Sci Fdn.; Inst Semiconductor, CAS.; Inst Phys, CAS.; State Key Lab Funct Mat Informat.; Inst Met, CAS.; Hong Kong Univ Sci & Technol.; Univ Hong Kong, Lab New Mat.; Chinese Acad Sci, Lab New Mat.; VG Semicon.; Riber.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/14941
专题中国科学院半导体研究所(2009年前)
通讯作者Sun BQ Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
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Sun BQ,Jiang DS,Pan Z,et al. Optical transitions and type-II band lineup of MBE-grown GaNAs/GaAs single-quantum-well structures[C]. PO BOX 211, 1000 AE AMSTERDAM, NETHERLANDS:ELSEVIER SCIENCE BV,2001:501-505.
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