Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells
	Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ; Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
	2003
会议名称	10th International Conference on High Pressures in Semiconductor Physics (HPSP-X)
会议录名称	PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 235 (2)
页码	427-431
会议日期	AUG 05-08, 2002
会议地点	GUILDFORD, ENGLAND
出版地	PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	0370-1972
部门归属	univ hong kong, dept phys, hong kong, hong kong, peoples r china; univ hong kong, hku cas joint lab new mat, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, natl lab supperlattices & microstruct, beijing 100083, peoples r china; city univ hong kong, dept phys & mat sci, kowloon, hong kong, peoples r china; inst mat res & engn, singapore 117602, singapore
摘要	Excitation-power dependence of hydrostatic pressure coefficients (dE/dP) of InxGa1-xN/InyGa1-yN multiple quantum wells is reported. When the excitation power increases from 1.0 to 33 mW, dE/dP increases from 26.9 to 33.8 meV/GPa, which is an increase by 25%. A saturation behavior of dE/dP with the excitation power is observed. The increment of dE/dP with increasing carrier density is explained by an reduction of the internal piezoelectric field due to an efficient screening effect of the free carriers on the field.
关键词	Piezoelectric Field Photoluminescence Temperature
学科领域	半导体材料
主办者	会议主办方: UNIV SURREY
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14863
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
推荐引用方式 GB/T 7714	Li Q,Fang ZL,Xu SJ,et al. Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells[C]. PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2003:427-431.

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