Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions

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	Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions
	Wang HM; Zeng YP; Pan L; Zhou HW; Zhu ZP; Kong MY; Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Symposium on Electron Microscopy of Semiconducting Materials and ULSI Devices at the Spring Materials-Research-Society Meeting
会议录名称	ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523
页码	231-234
会议日期	APR 15-16, 1998
会议地点	SAN FRANCISCO, CA
出版地	506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA
出版者	MATERIALS RESEARCH SOCIETY
ISSN	0272-9172
ISBN	1-55899-429-7
部门归属	chinese acad sci, inst semicond, div novel mat, beijing 100083, peoples r china
摘要	Using Transmission Electron Microscopy, we studied the misfit and threading dislocations in InAs epilayers. All the samples, with thickness around 0.5 mu m, were grown on GaAs(001) substrates by molecular beam epitaxy under As-rich or in-rich conditions. The As-rich growth undergoes 2D-3D mode transition process, which was inhibited under In-rich surface. High step formation energy under As-deficient reconstruction inhibits the formation of 3D islands and leads to 2D growth. The mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers.
学科领域	半导体材料
主办者	Mat Res Soc.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13845
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Wang HM,Zeng YP,Pan L,et al. Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1998:231-234.

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